Chemical vapor deposition of copper using argon as carrier gas

Rajagopal, G and Periasamy, V M (2008) Chemical vapor deposition of copper using argon as carrier gas. Journal of Metallurgy and Materials Science, 50 (3). pp. 175-181.

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Chemical Vapor Deposition (CVD) of copper was carried out using copper (II) acetylacetonate as the precursor material with Argon as the carrier gas. The instru-mentation of CVD process has been presented. The depos-ition of copper on aluminium was carried out at different temperatures at a rate of 50cc/sec of carrier gas and at a vapourising temperature of 200-210OC of the precursor. XRD and electrical resistance of the deposits were rep-orted. SEM and AFM studies were used to examine the morphology of the deposits.

Item Type:Article
Official URL/DOI:
Uncontrolled Keywords:Chemical vapor deposition; copper II acetylacetonate; argon; XRD
Divisions:Metal Extraction and Forming
ID Code:5101
Deposited By:Dr. A K Sahu
Deposited On:08 May 2012 11:48
Last Modified:08 May 2012 11:48
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