Rajagopal, G and Periasamy, V M (2008) Chemical vapor deposition of copper using argon as carrier gas. Journal of Metallurgy and Materials Science, 50 (3). pp. 175-181.
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Abstract
Chemical Vapor Deposition (CVD) of copper was carried out using copper (II) acetylacetonate as the precursor material with Argon as the carrier gas. The instru-mentation of CVD process has been presented. The depos-ition of copper on aluminium was carried out at different temperatures at a rate of 50cc/sec of carrier gas and at
a vapourising temperature of 200-210OC of the precursor. XRD and electrical resistance of the deposits were rep-orted. SEM and AFM studies were used to examine the morphology of the deposits.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Chemical vapor deposition; copper II acetylacetonate; argon; XRD |
| Subjects: | Metallurgy |
| Divisions: | Metal Extraction and Forming |
| Depositing User: | Dr. A K Sahu |
| Date Deposited: | 08 May 2012 06:18 |
| Last Modified: | 03 Sep 2026 06:37 |
| URI: | http://eprints.nmlindia.org/id/eprint/5101 |
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