Sen, S and Chakraborty, N and Rana, P and Sahu, Ranjan K and Singh, S and Panda, A K and Tripathy, S and Pradhan, D K and Sen, A (2016) Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO3. Journal of Materials Science: Materials in Electronics, 27(5) (IF-2.019). pp. 4647-4652.
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Polycrystalline GaFe1−xTixO3 (x = 0, 0.05, 0.10, 0.15) samples were synthesized by solid state reaction. The effect of substitution of Ti at the Fe site on the structural parameters, dielectric and magnetic was studied. The monophasic compounds crystallized in the orthorhombic space group pc21n and the unit cell volume decreases with increasing Ti content. The dielectric constant has increased while the dielectric loss has decreased at higher temperature as compared to parent compound GaFeO3 after doping Ti ions at the Fe site. Doping of Ti has also decreased the ferrimagnetism.
|Uncontrolled Keywords:||GaFeO3, Ti doping, magnetic properties|
|Divisions:||Material Science and Technology|
|Deposited By:||Sahu A K|
|Deposited On:||18 Aug 2017 12:53|
|Last Modified:||14 Nov 2017 18:10|
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