Effect of Si on the evolution of plasticity mechanisms, grain refinement and hardness during high-pressure torsion of a non-equiatomic CoCrMnNi multi-principal element alloy

Kishore, Kaushal and Chandan, A K and Hung, P T and Kumar, Saurabh and Ranjan, Manish and Kawasaki, M and Gubicza, Jeno (2023) Effect of Si on the evolution of plasticity mechanisms, grain refinement and hardness during high-pressure torsion of a non-equiatomic CoCrMnNi multi-principal element alloy. International Journal of Plasticity, 169 .

[img]PDF (Effect of Si on the evolution of plasticity mechanisms, grain refinement and hardness during high-pressure torsion of a non-equiatomic CoCrMnNi multi-principal element alloy) - Published Version
Restricted to NML users only. Others may use ->

32Mb

Abstract

The present study unraveled the defining role of small silicon (Si) addition (5 atomic %) in dramatically altering the plasticity mechanisms, grain refinement, and hardening response of a non-equiatomic CoCrMnNi multi-principal element alloy (MPEA) during high-pressure torsion (HPT) processing. Both the Si-free and the Si-added MPEAs had a face-centered cubic (FCC) structure and were subjected to a quasi-constrained HPT processing at 6 GPa pressure to different numbers of turns (0.5 and 5). Microstructure evolution was studied at the center and edge of the HPT-processed discs using X-ray diffraction line profile analysis (XLPA) and transmission electron microscopy (TEM). Si addition altered the predominant plasticity mechanism from micro-band formation to extensive occurrence of nano-twinning at the early stage of HPT processing. At later stages of HPT processing, both alloys exhibited deformation twinning but its propensity was considerably higher for the Si-added MPEA, as revealed by-50% higher twin fault probability. Additionally, the Si-added MPEA showed-30% higher dislocation density at any given stage of HPT processing compared to the Si-free MPEA. A significantly accelerated nano-structuring coupled with a finer saturation grain size was observed in the Si-added MPEA (34 nm for Si-free versus 23 nm for Si-added). These effects can be explained by the influence of Si addition on lowering the stacking fault energy (SFE) (from 40 mJ/m2 in Si-free to 20 mJ/m2 in Si-added MPEA) and increasing the solute pinning effect of Si on lattice defects. The plasticity mechanisms at the nano-scale were also influenced by the presence of Si as confirmed by the formation of nano-twins and stacking faults inside the nano-grains for the Si-added and Si-free MPEAs, respectively. The differences in plasticity mechanisms and microstructure evolution resulted in enhanced hardness in the early stages of HPT processing for the Si-added MPEA, but the difference in hardness between the two alloys tended to be reduced at higher strains.

Item Type:Article
Official URL/DOI:https://10.1016/j.ijplas.2023.103720
Uncontrolled Keywords:Dislocation(A), Microstructures(A), Strengthening mechanisms (A), Twinning (A), Multi-principal element alloy, High-entropy alloy, Stacking-fault energy, Tensile properties, Rate-sensitivity, Deformation, Microstructure, Strength, Temperature, Saturation, Behavior
Divisions:Material Science and Technology
ID Code:9447
Deposited By:HOD KRIT
Deposited On:07 Nov 2023 15:02
Last Modified:07 Nov 2023 15:02
Related URLs:

Repository Staff Only: item control page