Verma, B and Mishra, Suman K (2019) Spectral and structural investigation of layered growth of copper and graphene deposited by sputtering and annealing. Applied Physics A: Materials Science & Processing, 125(8) .
Full text not available from this repository.
Abstract
Various processes such as mechanical exfoliation, thermal decomposition of SiC, epitaxial layers, arc discharge, and chemical vapour deposition have been used to grow monolayer and multilayer graphene. However, the film qualities vary from batch to batch, thickness control is poor and quite often is non-environment friendly. Physical vapour deposition is an environmentally friendly process, but very few reports are there on graphene growth by this process. In the present manuscript, the layered growth of Cu and C of different thicknesses was deposited by magnetron sputtering and the growth mechanism of graphene for as-deposited as well for annealed films is studied. The a-C layer of thickness 20 nm yielded graphene of the best quality with 2–3 layers and I2D/IG ratio of 1.23.
| Item Type: | Article |
|---|---|
| Official URL/DOI: | https://doi.org/10.1007/s00339-019-2837-9 |
| Uncontrolled Keywords: | multilayer graphene;thermal decomposition of SiC, epitaxial layers;magnetron sputtering |
| Divisions: | Material Science and Technology |
| ID Code: | 8008 |
| Deposited By: | Sahu A K |
| Deposited On: | 01 Oct 2019 10:42 |
| Last Modified: | 01 Oct 2019 10:42 |
| Related URLs: |
Repository Staff Only: item control page
