Dhananjayan, N and Banerjee, T (1969) Nature and Growth of Electro-deposits of Manganese. In: Structure of Electro-Deposited Manganese. CSIR -NML, Jamshedpur, pp. 47-82.
The nature and growth of electro-deposits of manganese on substrates of alpha manganese, gamma manganese, copper, stainless steel and aluminium from pure solutions with no addition agents and with addition agents of sulphur dio-xide or selenious acid have been studied. It has been shown that a flash layer of amorphous manganese is init-ially deposited from pure solutions fitting in or rese-mbling that of alpha manganese over which gamma manganese begins to build up in absence of reducible sulphur or selenium compounds. In presence of sulphur dioxide, the amorphous nature continues to build up to an increasing thickness over which a crystalline pattern of alpha manganese is obtained. It has been further shown that tha substrate has a directing influence only in the first few atomic layers of the deposit and beyond that, with all other conditions of deposition remaining the same, on the same and similarly prepared substrates, gamma and alpha manganese can be prepared with an/addition of 0.1 gmil of SO2 or 112Se03 for alpha—deposition and the absence of reducible S or Se compounds for gamma deposition. Even gamma manganese can be deposited on alpha manganese and vice versa depending upon the absence or presence of reducible sulphur or selenium compounds in the electrolyte.
|Item Type:||Book or NML Publication|
|Uncontrolled Keywords:||Sulphur dioxide; selenious acid; amorphous manganese; selenium compounds|
|Divisions:||Metal Extraction and Forming|
|Deposited By:||Sahu A K|
|Deposited On:||26 Jun 2012 18:20|
|Last Modified:||26 Jun 2012 18:20|
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