Manoharan, S S and Singh, Brajendra and Sahu, Ranjan K and Zimmer, A and Lim, S -H and Salamanca-Riba, L G and Chandrasekar, V (2008) Effect of Ru-Mn redox interactions on the hole carrier density in pulsed electron deposited La1-xPbxMn0.8Ru0.2O3 (0.2 <= x <= 0.4) thin films. Journal Of Physics-Condensed Matter, 20 (23). p. 235205.
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Pulsed electron deposited thin films of Ru substituted La1-xPbxMn0.8Ru0.2O3 (0.2 <= x <= 0.4) show an increase in the magneto-resistance ratio by similar to 5 -15% at the respective metal to insulator transition (T-MIT) temperature when compared to the parent La0.6Pb0.4MnO3 thin film. A systematic decrease in TMIT is observed from similar to 310 to similar to 260 K when the hole (Pb) concentration varies from 40 to 20% with constant 20% Ru substitution at the Mn site. The x-ray rocking curve and high-resolution transmission electron microscopy (HRTEM) images of the thin films suggest that Ru occupies the Mn site and shows epitaxial growth of the films on the LaAlO3 (LAO) substrate. Transport and magneto-resistive properties show that Ru substitution maintains a considerable hole carrier density (due to Mn4+: t(2g)(3)e(g)(0)/Ru5+: t(2g)(3) e(g)(0)) even for La0.8Pb0.2Mn0.8Ru0.2O3 (8282) composition, which influences the double exchange interactions
|Official URL/DOI:||DOI: 10.1088/0953-8984/20/23/235205|
|Uncontrolled Keywords:||Mixed-Valence Manganites; Giant Magnetoresistance; Magnetotransport Properties; Phase-Separation; Perovskite; Temperature; Magnetization; Resistivity; Ferromagnet; Transition|
|Divisions:||Metal Extraction and Forming|
|Deposited By:||Sahu A K|
|Deposited On:||13 Jul 2011 12:15|
|Last Modified:||13 Jul 2011 12:15|
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